Publications

2019

19. "The origin of glass-like phonon dynamics in binary Si and Ge clathrates-I", Amrita Bhattacharya, Journal of Materials Chemistry C (2019).

 

18. "Compositional tailoring for realizing high thermoelectric performance in Hafnium free n-type ZrNiSn half-heusler alloys" NS Chauhan, S Bathula, B Gahtori, SDB Mahanti, A Bhattacharya, Avinash Vishwakarma, Ruchi Bhardwaj, and Ajay Dhar, ACS applied materials and interfaces (2019).

 

17. "Enhancement in thermoelectric performance of single step synthesized Mg doped Cu2Se: An experimental and theoretical study" Ruchi Bhardwaj, Amrita Bhattacharya, Kriti Tyagi, Bhasker Gahtori, Nagendra Singh Chauhan, Avinash Vishwakarma, Kishor Kumar Johari, Sivaiah Bathula, Sushil Auluck, and Ajay Dhar, Intermetallics 112, 106541 (2019).

16. "Tin doped Cu3SbSe4: a stable thermoelectric analogue for the mid-temperature applications", Ruchi Bhardwaj, Amrita Bhattacharya, Kriti Tyagi, Bhasker Gahtori, Nagendra Singh Chauhan, Sivaiah Bathula, Sushil Auluck, and Ajay Dhar, Materials Research Bulletin, 113, 38 (2019).

2018

 

15. "The origin of diverse lattice dynamics in the graphene family", Amrita Bhattacharya, Parul Rani Raghuvansi, and Gour P. Das, J. Phys. Cond. Matter, 30, 355003 (2018).

14. "Modulating the lattice dynamics of n-type Heusler compounds via tuning Ni concentration", Nagendra S. Chauhan, Bhasker Gahtori, Bathula Sivaiah, Subhendra D. Mahanti, Ajay Dhar, and Amrita Bhattacharya, Appl. Phys. Lett. 113, 013902 (2018).

2017

13. Anomalous Enhancement in Magnetization on Interstitial Doping Due to Spin Reversal in Magnetic Materials”, Nidhi SinghKritika AnandNithya Christopher Amrita Bhattacharya,  and  Avinash Kumar Srivastava,  J. Mater. Chem. C, 5, 11832 (2017).

12. “Formation of vacancies in Si/Ge Clathrates: The importance of broken symmetries”, Amrita Bhattacharya, Christian Carbogno, Bodo Bohme, Michael Baitinger, Yuri Grin, and Matthias Scheffler, Phys. Rev. Lett. 118, 236401 (2017).

2016

11. "Unraveling the role of vacancies in the potentially promising thermoelectric clathrates Ba8ZnxGe46−x−y▢y", Amrita Bhattacharya, and Saswata Bhattacharya, Phys. Rev. B 94, 094305 (2016).

2015

10. “Exploring N-Rich Phases in LixNy Clusters for Hydrogen Storage at Nanoscale”, Amrita Bhattacharya and Saswata Bhattacharya, The journal of physical chemistry letters, 6, 3726 (2015).

9. "A first-principles study of the III–IV–V semiconductor nanosheets", Amrita Bhattacharya, Saswata Bhattacharya, and Gour Prasad Das, Phys. Chem. Chem. Phys. 17, 1039 (2015).

2013

8. “Exploring semiconductor substrates for silicene epitaxy”, Amrita Bhattacharya, Saswata Bhattacharya, and Gour P. Das, Applied Physics Letters, 103, 123113, (2013).


7. “Designing a new class of III-IV-V semiconductor nanosheets”, A. Bhattacharya, S. Chakraborty, and G. P. Das, AIP Conference Proceedings, 850, 1512, (2013).

2012

6. “Anti-kubas type interaction in hydrogen storage on a Li decorated BHNH sheet: A first-principles based study”, S. Bhattacharya, A. Bhattacharya, and G. P. Das, The Journal of Physical Chemistry C, 116, 3840, (2012).

 

5. “Band gap engineering by functionalization of BN sheet”, A. Bhattacharya, S. Bhattacharya, and G. P. Das. Physical Review B, 85, 035415, (2012).

2011

4. “Strain-induced band-gap deformation of H/F - passivated graphene and h-BN sheet”, A. Bhattacharya, S. Bhattacharya, and G. P. Das, Physical Review B, 84, 075454, (2011).


3. “Third conformer of graphane: A first-principles density functional theory study”, A. Bhattacharya, S. Bhattacharya, C. Majumder, and G. P. Das, Physical Review B, 83, 033404, (2011).

2010

2. “First principles prediction of the third conformer of hydrogenated BN sheet”, A. Bhattacharya, S. Bhattacharya, C. Majumder, and G. P. Das, physica status solidi Rapid Research Letters, 4, 368, (2010).


1. “Transition- metal decoration enhanced room-temperature hydrogen storage in a defect-modulated graphene sheet”, A. Bhattacharya, S. Bhattacharya, C. Majumder, and G. P. Das, The Journal of Physical Chemistry C, 114, 10297, (2010).

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